Michael Borgholthaus, Brigham State University
Engineering
This paper seeks to demonstrate the simulated gain characterization of MOS transistors in different regions of channel inversion on silicon. In the weak region of MOSFET inversion a constant value of gain is observed. When current is increased and the device determined to be strongly inverted the gain falls off with the square of k/L from this constant gain. Between the weak and strong inversion regions is the moderate inversion region. In the moderate inversion region the gain rises above the constant weak inversion value before falling off as the channel becomes strongly inverted. If biased to low or moderate inversion, amplifying circuits can achieve higher gain performance at low currents than could be achieved in the typical strong inversion region.